Design and performance analysis of a low-pull-in-voltage RF MEMS shunt switch for millimeter-wave therapy, IoT, and 5G applications

Recent advancements in wireless communication systems utilize miniaturized devices based on microelectromechanical system technology for present and future 5G applications. Nowadays, RF are utilizing frequencies up to 30 GHz with substantial signal propagation that leads a slow data rate. On the other hand, there is huge spectrum available millimeter-wave frequency range of 30–300 GHz. The attractive development smart technology. In this paper, low-pull-in-voltage capacitive type MEMS switch proposed operate at above new iterative meandering technique where span length each section meanders differs relative first section. A low pull-in voltage 1.8 V achieved large capacitance ratio 63. exhibits insertion loss ?0.24 dB 41 possesses high isolation ?46.7 38 design validated by comparing theoretical simulated results, can be efficiently utilized